EE 512/612 Solid State Electronics II

Instructor: Branimir Pejcinovic

Course Outline

This is the second part of the sequency and it deals with the principles of operation of the two most important semiconductor devices: BJT and MOSFET. Students will also learn to use modern simulation tools to help in the process of analysis and design. It is recommended for students interested in semiconductor device operation, device design and analysis, VLSI, optoelectronics and power electronics. Several homeworks and a project will be assigned during the quarter. The third part of the sequence will be examining some special devices (high speed/high frequency/high integration) in greater detal The course is structured as follows:

Device Simulation: To be used for projects
- Basic theory
- how to run it
- hands-on examples
Semiconductor overview; BGN, minority mobility]
PN junction Review and some new material
- narrow base diode
- high forward bias
- p-i-n diode
- transient and high frequency behavior
Bipolar Junction Transistor: Advanced topics
- basic operation
- equivalent circuit(s)
- fT, fmax
- realistic emitters; base; collector
- high current operation
- integrated transistors
MOSFET: Advanced topics
- MOS (2- , 3- , and 4-terminal)
- Short- and narrow-channel effects
- equivalent circuits
- high frequency of operation and transients

Other information:

Textbook: M. Shur, "Physics of Semiconductor Devices", Prentice Hall, ISBN 0-13-666496-2.
Pre-requisites: Some familiarity with solid state fundamentals: e.g. band structure, mobility, recombination etc, and basic operation of e.g. p-n junctions. Ability to use Unix systems and simulation tools.
Grading: based on homework (cca. 20%), quizes (20%) and project (cca. 60%).

Course and Lab Notes

I will be putting available class notes here and the files will be in postscript format. The originals are usually written in LaTeX - let me know if you'd like to get those. I hope to convert the LaTeX files directly to HTML but that may take some time. Here are some of the notes related to introduction to device simulation.

New! Introduction to discretization of semiconductor equations: numintro.ps
New! Introduction to discretization of semiconductor equations (part 2): numintr2.ps
Physical parameters needed for simulation: parameter.ps
Example run file for MEDICI with explanations: NPN Si transistor mesh and doping construction NPN_exmpl_grid.inp
Example run file for MEDICI with explanations: runing forward bias simulation on NPN transistor constructed above NPN_exmpl_forwardIV.inp
Example run file for MEDICI with explanations: post-processing and plotting of results NPN_exmpl_plot.inp
Example file for MOS device grid and doping construction in Medici MOS_exmpl_grid.inp
Example file for MOS device drain I-V characteristic simulation in Medici MOS_exmpl_drainIV.inp
Example file for MOS device gate I-V characteristic simulation in Medici MOS_exmpl_gateIV.inp